Optimization of ingaas inalas avalanche photodiodes pdf

Optimization of ingaas inalas avalanche photodiodes pdf
The performance of uncooled InGaAs/InAlAs/InP avalanche photodiodes operating near 1.5 µm has been studied theoretically. Device modelling based on advanced drift and diffusion model with commercial software, the Crosslight APSYS, has been performed. Separate absorption, grading, charge and multiplication avalanche photodiodes with a relatively thick undepleted p-type InGaAs …
We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) applications with demand for high gain and low breakdown voltage.
In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD.
Xie, Shiyu (2012) Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes.
Inverted InAlAs/InGaAs Avalanche Photodiode with Low High Low Electric Field Profile Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama et al.-Study of Wasted Space Effect in Avalanche Photodiodes: A New Look at the Size-Dependent Impact Ionization Properties under Submicron Scale Zhiyuan Zheng, Kunyuan Xu and Gang Wang-Dark Current Reduction of Avalanche Photodiode …
In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) …
Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field: ZHU Shuai-yu 1, XIE Sheng 1, CHEN Yu 2: 1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin 300072, China;
Citation: Huang JJS, Chang HS, Jan YH (2017) Reliability Challenges of Nanoscale Avalanche Photodiodes. Open Acc J Photoen 1(3): 00015. DOI: 10.15406/oajp.2017.01.00015
Separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) are widely accepted in photon starved optical communication systems due to the presence of large photocurrent gain. In this work, we present a detailed analysis of dark currents of planar-type SAGCM InGaAs–InP
Invited Paper High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications Kyung-Sook Hyun*, Youngmi Paek, Yong-Hwan Kwona), Ilgu Yunb) and El-Hang Leec) School of Electronics and Information Engineering, Sejong University, Seoul 143-747, Korea a) Telecom.
Journal of the Korean Physical Society, Vol. 44, No. 4, April 2004, pp. L779˘L784 Letters Characteristics of a Planar InP/InGaAs Avalanche Photodiode
1 Abstract— We report a 1 cm x 1 cm array of 100 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APD). The average breakdown voltage was 28.7 volts with a standard
avalanche material that naturally has low excess noise. Our multi-stage APD design is an engineered InAlAs/InGaAs structure in which the k value is closer to
For 1.5-μ m operation, InGaAs photodiodes have higher bandwidth and less noise than Ge detectors. To reduce the laser pulse energy requirements, APDs may be used. An APD is a special type of photodiode that amplifies photocurrent via an electron avalanche process.
Optimization of InGaAs/InAlAs Avalanche Photodiodes By Jun Chen, Zhengyu Zhang, Min Zhu, Jintong Xu and Xiangyang Li Download PDF (2 MB)
avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and
ng et al.: effect of impact ionization in the ingaas absorber on excess noise of avalanche photodiodes 1093 table i structure of the inp apds modeled
Abstract Avalanche photodiodes (APDs) are high-sensitivity, semiconductor photo-detectors. In this work, two APDs for next generation 10Gbit/s fiber-to-the …

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Design Characterization and Simulation of Avalanche
A Double Heterostructure Multiplication Region in AlGaN
US5432361A Low noise avalanche photodiode having an
Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers Bongyong Leea, Hongil Yoona, Kyung Sook Hyunb, Yong Hwan Kwonc, Ilgu Yuna,*
When operated in the so-called Geiger mode with carefully designed electronics, avalanche photodiodes can be used even for single photon counting with dark count rates well below 1 kHz and with a quantum efficiency of several tens of percent, sometimes even well above 50%.
The ionization counts were used to characterize the joint pdf of the stochastic partial gain, M DC (τ), and its stochastic avalanche duration time, τ, resulting from a single avalanche trigger. The stochastic parametric model, in terms of 〈 M DC 〉, M DC ( τ ), and τ , was then used to approximate the low order statistics of the SCM APD’s impulse-response function.
Avalanche photodiode and the principle of avalanche photodiode work, as semiconductor will be discussed. This reverse bias device also used guard ring as is to remove the high electric fields and to drain the surface currents due to high reverse bias voltage. It also showed the mode of operation used in avalanche photodiode and potential materials that can be used optimum in looking for best
ResearchArticle Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics JackJia-ShengHuang,1,2 H.S.Chang,2 Yu-HengJan,1,2 C.J.Ni,2
The performance of uncooled resonant cavity enhanced InGaAs/InAlAs photovoltaic devices operating near 1.55 mum has been studied both theoretically and experimentally. The analyses include two different types of structures with cavity end mirrors made of semiconducting and metallic reflectors as well as semiconducting and hybrid (dielectric Si3N4/SiO2 + metal) Bragg reflectors. Optimization of
efficiency can be achieved from 1100nm to 1700 nm with our InGaAs Avalanche Photodiodes. They were designed to maintain high gain, high quantum efficiency and high bandwidth even with their large area of up to 200 μm.
InGaAs/InAlAs APD, with an avalanche region thickness, w, of 100 nm, that produces f 3 dB = 18.5 GHz at M = 10 and a responsivity-bandwidth product of 168 A/W·GHz.
InAlAs avalanche photodiodes with very thin multiplication
InGaAs avalanche photodiode (APD) for 950 – 1650 nm . wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs in a series of asymmetric gain stages whose layer ordering acts to enhance the rate of electron- initiated impact ionization and to suppress the rate of
240 RITESH GUPTA et al : OPTIMIZATION OF InAlAs/InGaAs HEMT PERFORMANCE FOR MICROWAVE FREQUENCY Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability Ritesh Gupta, Sandeep Kumar Aggarwal, Mridula Gupta, and R. S. Gupta Abstract—In the present paper efforts have been carrier density in the two-dimensional quantum well. made to optimize InAlAs
There is a strong interest in developing sensitive Short Wavelength Infrared (SWIR) avalanche photodiodes (APDs) for applications like eye safe laser ranging and robotic vision. The excess noise associated with the avalanche process is critical in dictating the sensitivity of APDs. InGaAs APDs that are commonly used in the SWIR region have either InP or InAlAs as an avalanche layer and these
Breaking the buildup-time limit of sensitivity in avalanche photodiodes by dynamic biasing Majeed M. Hayat,1,2,* Payman Zarkesh-Ha,1,2 Georges El-Howayek,1,3 Robert
Effects of mesa etching and geometry on InGaAs/InAlAs avalanche photodiodes (APDs) were investigated by using both wet and inductively coupled plasma (ICP) etching with different mesa shapes as well as etchants. It was found that the mesa geometry had no evident impact on APDs’ characteristics regardless of the etching techniques applied.
InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 /spl mu/m for high-speed and low-voltage-operation optical receiver Abstract: We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 /spl mu/m and achieved 18.8 V operation.
Abstract. In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM …
This thesis describes the experimental research carried out on avalanche photodiodes (APDs) for single photon detection. The work covered (i) 1550 nm wavelength single photon detection using InGaAs/InAlAs single photon avalanche diodes (SPADs), and (ii) soft X-ray detection using III-V semiconductor photodiodes or APDs. SPADs for 1550 nm single photons detection have numerous …
Copyright by Jeffrey Byron Hurst 2007
Strained InAlAs/InGaAs SL avalanche photodiode because the InGaAs well can work as an absorption layer as well as a multiplication region. With this structure, the received light signal induces an electron-hole mixed injection into
Using 1.0 μm avalanche region as an example, Pb at 5% overbias ratio is 0.72 and 0.58 for InAlAs and InP, respectively, with larger differences at smaller overbias ratio [12].
The use of avalanche photodiodes (APDs) in 10 Gbps systems is promising to satisfy the increasing demand of high performance optical transmission systems. However, there exist several problems to be resolved for their use as a high-speed optical detector, including low reliability and narrow structural margins for very high-speed response. Many researches have been focused on the improvement
NANO EXPRESS Open Access Optimization of InGaAs/InAlAs Avalanche Photodiodes Jun Chen1*, Zhengyu Zhang1, Min Zhu1, Jintong Xu2 and Xiangyang Li2 Abstract
DESIGN AND PROPERTIES OF InGaAs/InGaAsP/InP AVALANCHE
Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes . By Shiyu Xie. Download PDF (3 MB) Abstract. Avalanche photodiodes (APDs) can provide higher sensitivity, when the noise is dominated by electronic noise, than conventional p-i-n photodiodes due to its internal gain achieved via the …
The ratio of the ionization rates of an avalanche photodiode having an avalanche multiplication layer consisting of InGaAs/InAlAs was measured on page 993 of Applied Physics Letters, vol. 55, 1989 by Kagawa. T, et al, however, it has been found that the ionization rate of electrons increases dependence on the superlattice structure.
Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. In this work, we study the temperature dependence of …
Waveguide InGaAs/InAlAs avalanche photodiodes (APDs) with high bandwidths (>40 GHz) and low dark current (<;50 nA at 90% of breakdown voltage) were d – candide ou loptimisme %d8%a8%d8%a7%d9%84%d8%b9%d8%b1%d8%a8%d9%8a%d8%a9 pdf arXiv:0812.2840v1 [quant-ph] 15 Dec 2008 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. , NO. 1 Comprehensive Characterization of InGaAs/InP Avalanche Photodiodes at 1550nm with an Active
Abstract—It is shown that optimization of the electric field pro- file in the absorption region of separate absorption, charge, and multiplication InGaAs–InAlAs avalanche photodiodes is critical to
speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes Shiyu Xie A thesis submitted for the degree of Doctor of Philosophy Department of Electronic and Electrical Engineering The University of Sheffield March 2012 : ii Acknowledgement First, I would sincerely thank my supervisor, Dr. Chee Hing Tan, for giving me the opportunity to pursue a …
the growth optimization of InGaAs using molecular-beam epitaxy for low-dark-current avalanche photodiodes through the study of the effects of the growth conditions on dark current.
Read “A study of InGaAs/InAlAs/InP avalanche photodiode, Solid-State Electronics” on DeepDyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips.
We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD) for short-wave infrared applications with demand for …
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III ) elements of the periodic table while arsenic is a ( group V ) element.
The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAs∕InAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This
and InAlAs [7–10] avalanche layers. In this work, we demonstrate a novel high speed In 0.53 Ga 0.47 As/Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (hereafter InGaAs/AlGaAsSb) …
Modern avalanche photodiodes are complex semiconductor devices, hence designing process has to be sup- ported by extensive software simulation of electrical and optical properties [5] [6]. APSYS Crosslight is a gen-
IEEE JOURNAL OF QUANTUM ELECTRONICS VOL. NO. 1
CAMPBELL: RECENT ADVANCES IN TELECOMMUNICATIONS AVALANCHE PHOTODIODES 111 Fig. 3. Excess noise factor F(M) for wafer-bonded Si/InGaAs heterojunc-
The avalanche photodiode for optical communications using InGaAsP and InP in the light absorbing layer is widely used. In this avalanche photodiode, electron-hole pair generated in …
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good
1. Introduction. Avalanche photodiodes (APDs) are the most commonly used photodetectors in near infrared spectral range. They are especially important in applications in which their internal gain can play significant role, e.g. in long-haul data transmission systems.
Abstract. In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD.
Avalanche photodiodes are widely utilized in research, military and commercial applications which make them attractive for further development. In this paper the results of numerical simulations of uncooled InGaAs/InAlAs/InP based photodiodes are presented. The devices were optimized for 1.55 μm
InGaAs/InGaAsP/InP AVALANCHE PHOTODIODE SACM avalanche photodiodes were characterized by measuring current-voltage and capacitance-voltage curves, the speed of response and by photocurrent spectroscopy. The designed SACM APD shows responsivity of 0.85 – 0.9 A/W at 1310 nm for reverse bias voltage 15 V and avalanche gain up to 8 near the breakdown voltage. K e y w o r d s: InGaAs…
In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/Al x Ga 1-x N/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation.
Abstract We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD) for short-wave infrared applications with demand for high gain and low breakdown voltage.
Reliability Challenges of Nanoscale Avalanche Photodiodes
Recent Advances in Telecommunications Avalanche Photodiodes
InGaAs/AlGaAsSb avalanche photodiode with high gain
Nakata, I. Watanabe, K. Makita, and T. Torikai, “InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 m for high-speed and low-voltage-operation optical receiver,” Electron. Lett.
InGaAs/InAlAs Single Photon Avalanche Diode at 1550 nm X. Meng, S. Xie, X. Zhou, C. H. Tan, and J. S. Ng Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street,
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of
OSA InGaAs–InP avalanche photodiodes with dark current
Design and Simulation of N-substrate Reverse Type InGaAsP
Design of Triple-mesa InGaAs/InP Avalanche Photodiode with

Design and characterisation of InGaAs high speed

Multiplication theory for dynamically biased avalanche

InGaAs infrared detector development for SWIR imaging

Optimization of InGaAs/InAlAs Avalanche Photodiodes (pdf

Advances in InGaAs/InP single-photon detector systems for
– Indium gallium arsenide Wikipedia
Development of low excess noise SWIR APD DSS12 XBaifinal-V3
Avalanche Photodiodes – Silicon and InGaAs APDs

1550 nm InGaAs/InAlAs single photon avalanche diode at

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Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes


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18 responses to “Optimization of ingaas inalas avalanche photodiodes pdf”

  1. Makayla Avatar
    Makayla

    Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III ) elements of the periodic table while arsenic is a ( group V ) element.

    External electroluminescence measurements of InGaAs∕InAlAs
    Design and characterisation of InGaAs high speed CORE

  2. speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes Shiyu Xie A thesis submitted for the degree of Doctor of Philosophy Department of Electronic and Electrical Engineering The University of Sheffield March 2012 : ii Acknowledgement First, I would sincerely thank my supervisor, Dr. Chee Hing Tan, for giving me the opportunity to pursue a …

    Copyright by Jeffrey Byron Hurst 2007
    High-speed and highly reliable InP/InGaAs avalanche
    Optimization of eyesafe avalanche photodiode lidar for

  3. Strained InAlAs/InGaAs SL avalanche photodiode because the InGaAs well can work as an absorption layer as well as a multiplication region. With this structure, the received light signal induces an electron-hole mixed injection into

    InGaAs infrared detector development for SWIR imaging
    1550 nm InGaAs/InAlAs single photon avalanche diode at

  4. Madeline Avatar
    Madeline

    The use of avalanche photodiodes (APDs) in 10 Gbps systems is promising to satisfy the increasing demand of high performance optical transmission systems. However, there exist several problems to be resolved for their use as a high-speed optical detector, including low reliability and narrow structural margins for very high-speed response. Many researches have been focused on the improvement

    Multi-gain-stage InGaAs Avalanche Photodiode with Enhanced

  5. Samantha Avatar
    Samantha

    InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 /spl mu/m for high-speed and low-voltage-operation optical receiver Abstract: We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 /spl mu/m and achieved 18.8 V operation.

    High-speed and highly reliable InP/InGaAs avalanche
    InGaAs/InAlAs Avalanche Photodiode With Low Dark IEEE

  6. Strained InAlAs/InGaAs SL avalanche photodiode because the InGaAs well can work as an absorption layer as well as a multiplication region. With this structure, the received light signal induces an electron-hole mixed injection into

    Indium gallium arsenide Wikipedia

  7. There is a strong interest in developing sensitive Short Wavelength Infrared (SWIR) avalanche photodiodes (APDs) for applications like eye safe laser ranging and robotic vision. The excess noise associated with the avalanche process is critical in dictating the sensitivity of APDs. InGaAs APDs that are commonly used in the SWIR region have either InP or InAlAs as an avalanche layer and these

    Access to Electronic Thesis White Rose eTheses Online

  8. Madison Avatar
    Madison

    CAMPBELL: RECENT ADVANCES IN TELECOMMUNICATIONS AVALANCHE PHOTODIODES 111 Fig. 3. Excess noise factor F(M) for wafer-bonded Si/InGaAs heterojunc-

    Design and characterisation of InGaAs high speed CORE
    InGaAs/InAlAs single photon avalanche diode for 1550 nm
    IEEE PHOTONICS TECHNOLOGY LETTERS VOL. 27 NO. 16

  9. Abigail Avatar
    Abigail

    Abstract We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD) for short-wave infrared applications with demand for high gain and low breakdown voltage.

    Design of Triple-mesa InGaAs/InP Avalanche Photodiode with
    Temperature Dependence Study of Mesa-Type InGaAs/InAlAs

  10. Caroline Avatar
    Caroline

    Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III ) elements of the periodic table while arsenic is a ( group V ) element.

    Design and Simulation of N-substrate Reverse Type InGaAsP

  11. Christopher Avatar
    Christopher

    The ratio of the ionization rates of an avalanche photodiode having an avalanche multiplication layer consisting of InGaAs/InAlAs was measured on page 993 of Applied Physics Letters, vol. 55, 1989 by Kagawa. T, et al, however, it has been found that the ionization rate of electrons increases dependence on the superlattice structure.

    A study of InGaAs/InAlAs/InP avalanche photodiode Solid

  12. Nathaniel Avatar
    Nathaniel

    The use of avalanche photodiodes (APDs) in 10 Gbps systems is promising to satisfy the increasing demand of high performance optical transmission systems. However, there exist several problems to be resolved for their use as a high-speed optical detector, including low reliability and narrow structural margins for very high-speed response. Many researches have been focused on the improvement

    IEEE JOURNAL OF QUANTUM ELECTRONICS VOL. NO. 1

  13. Michelle Avatar
    Michelle

    We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) applications with demand for high gain and low breakdown voltage.

    Experimental investigation of the charge-layer doping
    DESIGN AND PROPERTIES OF InGaAs/InGaAsP/InP AVALANCHE

  14. 1 Abstract— We report a 1 cm x 1 cm array of 100 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APD). The average breakdown voltage was 28.7 volts with a standard

    Design of Triple-mesa InGaAs/InP Avalanche Photodiode with

  15. Daniel Avatar
    Daniel

    Waveguide InGaAs/InAlAs avalanche photodiodes (APDs) with high bandwidths (>40 GHz) and low dark current (<;50 nA at 90% of breakdown voltage) were d
    OSA InGaAs–InP avalanche photodiodes with dark current
    InGaAs/InAlAs Avalanche Photodiode With Low Dark IEEE
    Design and characterisation of InGaAs high speed

  16. The use of avalanche photodiodes (APDs) in 10 Gbps systems is promising to satisfy the increasing demand of high performance optical transmission systems. However, there exist several problems to be resolved for their use as a high-speed optical detector, including low reliability and narrow structural margins for very high-speed response. Many researches have been focused on the improvement

    Time resolved gain and excess noise properties of InGaAs
    Design and characterisation of InGaAs high speed
    InGaAs/AlGaAsSb avalanche photodiode with high gain

  17. Thomas Avatar
    Thomas

    Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field: ZHU Shuai-yu 1, XIE Sheng 1, CHEN Yu 2: 1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin 300072, China;

    OSA Impact of etching on the surface leakage generation
    Optimization of InGaAs/InAlAs APDs for SWIR detection with

  18. Hannah Avatar
    Hannah

    Xie, Shiyu (2012) Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes.

    OSA Impact of etching on the surface leakage generation
    Design and Simulation of N-substrate Reverse Type InGaAsP
    A Double Heterostructure Multiplication Region in AlGaN