Optimization of ingaas inalas avalanche photodiode pdf

Optimization of ingaas inalas avalanche photodiode pdf
Meng, C. H. Tan, and J. S. Ng, “InGaAs/InAlAs Single Photon Avalanche Photodiode for 1550 nm photon counting,” 41st International Symposium on Compound Semiconductors (ISCS), …
Origin and optimization of large dark current increase in InGaAs/InP APD J. Wen1,2 , W. J. Wang1,3*, W. D. Hu1, N. Li1, Z.F. Li1,W. Lu1 1National Laboratory for
Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes Xie, Shiyu (2012) Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes.
This paper presents results of three research and development efforts on the subject of avalanche photodiodes with InGaAs absorbers and InAlAs multiplication layers. The first portion of the paper presents results on 256×256 arrays of InAlAs-InGaAs APDs. …
Finally, in the third portion of this paper, performance results of a novel impact ionization engineered InGaAs-InAlAs based avalanche photodiode are presented showing excess noise values lower than any previously published InGaAs based avalanche photodiode.
An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs…
high-sensitivity InAlAs-APD provides sufficient charac-teristics for 2.5-Gbps and 10-Gbps high-sensitivity transmitter applications. 1. Structure of High-sensitivity Avalanche Photodiodes (APD) In line with rising volumes of traffic on the Internet and other means of information communication, the speed of trunk and metro systems in Japan and over-seas is being increased (from 2.5 Gbps to 10
The weak temperature dependence of our mesa-type InGaAs/InAlAs APD brought performance advantage to maintain the gain when the device was subject to temperature fluctuations. We attributed the superior temperature dependence of the avalanche breakdown voltage to the optimized design of the InAlAs multiplication layer thickness and InAlAs charge control layer doping.
Optimization of InGaAs/InAlAs SAGCM-APDs for high gain and low breakdown voltage. • Simulation and measurement results of APDs are discussed. • APD series with different charge-layer doping levels has been realized.
We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD) for short-wave infrared applications with …
In this paper the comprehensive APSYS modeling results of the avalanche photodiode structure, based on In- GaAs/InAlAs/InP material system, have been presented. The Zener effect was taken into account in simulations,

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InGaAs-Avalanche-Photodioden für bildgebende CORE
Impact ionization coefficient ratio in InGaAs/InAlAs
Origin and optimization of large dark current increase in
G. M. Williams et al., “Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions,” …
avalanche diodes (SPADs), is a currently mainstreaming solu- tion due to the advantages of low cost and small size [3, 4]. The key parts of an InGaAs/InP single-photon detector in-
Abstract. High-sensitivity InGaAs-detectors for the short-wave infrared (SWIR) reveal a number of interesting properties which can be beneficially used in industrial process control or in defense and security applications.
Avalanche photodiode An avalanche photodiode ( APD ) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication .
Avalanche photodiode has been widely deployed due to its performance advantages such as high receiver sensitivity, low noise, and high bandwidth [4]. Figure 1 shows the general device schematics and electric field profile of an APD device. For the top-illumination APD illustrated in Figure 1, the top layer is a heavily p-doped InGaAs layer that forms Ohmic contact with the p-metal. The next is
Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements
US5539221A Staircase avalanche photodiode - Google Patents
avalanche photodiodes with InP and InAlAs multiplication layers Andrew S. Huntington*, Madison A. Compton, photon counting, InGaAs, InAlAs, InP, dark count rate, breakdown 1. INTRODUCTION 1.1. InGaAsP and AlGaInAs SACM APDs for near infrared applications Two semiconductor alloys are commonly used to fabricate photodetectors sensitive in the near infrared (NIR) between 1000 – 1600 …
EE233 3/9/06 TPLee • Principle of Photodetectors absorption, collection, types, responsivity, quantum efficiency, • PIN Photodiodes structures, Si-pin diodes, InGaAs pin diodes, rise-time and
To predict pulse detection performance when implemented in high speed photoreceivers, temporally resolved measurements of a 10-stage InAlAs/InGaAs single carrier multiplication (SCM) avalanche photodiode (APD)’s avalanche response to short multi-photon laser pulses were explained using instantaneous (time resolved) pulse height statistics of
An example of such device is Separate Absorption, Grading, Charge and Multiplication Avalanche Photodiode. It achieves far greater sensitivity, faster response time and smaller dark current levels in comparison with conventional p–n or p–i–n avalanche photodiodes. Additionally, to improve parameters of the photodiode an integrated monolithic optics can be applied.
(a) Multiplication factors of InAlAs APD 1 ( ) ,2( ) ), and 3 ( ) as functions of reverse bias calculated with (solid symbols) and without (open symbols) impact ionization in the InGaAs layer.
Abstract. In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a …
An avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the
An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa x Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic.
of InGaAs/InP avalanche photodiode (APD)s, which are made to differ in guard ring depth and the shape of the main p-junction. The fabrication parameters …
Photodetectors for Optical Fiber Communications
InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is clearly applicable to future optical communication systems at …
the growth optimization of InGaAs using molecular-beam epitaxy for low-dark-current avalanche photodiodes through the study of the effects of the growth conditions on dark current. An optimum growth temperature of 545 oC and arsenic beam equivalent pressure of 2×10-5 Torr was found for producing the lowest dark current density. Avalanche photodiodes were implemented with a dark …
1896 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 23, NO. 5, MAY 2005 Gain–Bandwidth Product Optimization of Heterostructure Avalanche Photodiodes Oh-HyunKwon,Majeed M
avalanche photodiode with a relatively thick undepleted p-type InGaAs absorption region and thin InAlAs multiplication layer. The simulations were focused on the influence of the absorbing layer
Avalanche photodiode Wikipedia
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Improved breakdown model for estimating dark count rate in

T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes
1896 JOURNAL OF LIGHTWAVE TECHNOLOGY VOL. 23 NO. 5
InAlAs-InGaAs based avalanche photodiodes for next

Design considerations of high-performance InGaAs/InP

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17 responses to “Optimization of ingaas inalas avalanche photodiode pdf”

  1. Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes Xie, Shiyu (2012) Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes.

    Photodetectors for Optical Fiber Communications
    US5539221A Staircase avalanche photodiode – Google Patents
    Origin and optimization of large dark current increase in

  2. 1896 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 23, NO. 5, MAY 2005 Gain–Bandwidth Product Optimization of Heterostructure Avalanche Photodiodes Oh-HyunKwon,Majeed M

    1896 JOURNAL OF LIGHTWAVE TECHNOLOGY VOL. 23 NO. 5
    US5539221A Staircase avalanche photodiode – Google Patents

  3. Abstract. High-sensitivity InGaAs-detectors for the short-wave infrared (SWIR) reveal a number of interesting properties which can be beneficially used in industrial process control or in defense and security applications.

    Origin and optimization of large dark current increase in

  4. Michael Avatar
    Michael

    the growth optimization of InGaAs using molecular-beam epitaxy for low-dark-current avalanche photodiodes through the study of the effects of the growth conditions on dark current. An optimum growth temperature of 545 oC and arsenic beam equivalent pressure of 2×10-5 Torr was found for producing the lowest dark current density. Avalanche photodiodes were implemented with a dark …

    Avalanche photodiode Wikipedia

  5. Meng, C. H. Tan, and J. S. Ng, “InGaAs/InAlAs Single Photon Avalanche Photodiode for 1550 nm photon counting,” 41st International Symposium on Compound Semiconductors (ISCS), …

    Photodetectors for Optical Fiber Communications
    Improved breakdown model for estimating dark count rate in

  6. Lillian Avatar
    Lillian

    InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is clearly applicable to future optical communication systems at …

    Design considerations of high-performance InGaAs/InP

  7. Kimberly Avatar
    Kimberly

    avalanche photodiode with a relatively thick undepleted p-type InGaAs absorption region and thin InAlAs multiplication layer. The simulations were focused on the influence of the absorbing layer

    Improved breakdown model for estimating dark count rate in

  8. Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements

    T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes
    InAlAs-InGaAs based avalanche photodiodes for next

  9. Katherine Avatar
    Katherine

    1896 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 23, NO. 5, MAY 2005 Gain–Bandwidth Product Optimization of Heterostructure Avalanche Photodiodes Oh-HyunKwon,Majeed M

    InAlAs-InGaAs based avalanche photodiodes for next
    InGaAs-Avalanche-Photodioden für bildgebende CORE

  10. Finally, in the third portion of this paper, performance results of a novel impact ionization engineered InGaAs-InAlAs based avalanche photodiode are presented showing excess noise values lower than any previously published InGaAs based avalanche photodiode.

    Improved breakdown model for estimating dark count rate in
    Avalanche photodiode Wikipedia
    1896 JOURNAL OF LIGHTWAVE TECHNOLOGY VOL. 23 NO. 5

  11. high-sensitivity InAlAs-APD provides sufficient charac-teristics for 2.5-Gbps and 10-Gbps high-sensitivity transmitter applications. 1. Structure of High-sensitivity Avalanche Photodiodes (APD) In line with rising volumes of traffic on the Internet and other means of information communication, the speed of trunk and metro systems in Japan and over-seas is being increased (from 2.5 Gbps to 10

    T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes
    Design considerations of high-performance InGaAs/InP

  12. Madeline Avatar
    Madeline

    Finally, in the third portion of this paper, performance results of a novel impact ionization engineered InGaAs-InAlAs based avalanche photodiode are presented showing excess noise values lower than any previously published InGaAs based avalanche photodiode.

    Improved breakdown model for estimating dark count rate in
    Origin and optimization of large dark current increase in

  13. Brianna Avatar
    Brianna

    avalanche diodes (SPADs), is a currently mainstreaming solu- tion due to the advantages of low cost and small size [3, 4]. The key parts of an InGaAs/InP single-photon detector in-

    T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes
    Origin and optimization of large dark current increase in

  14. avalanche diodes (SPADs), is a currently mainstreaming solu- tion due to the advantages of low cost and small size [3, 4]. The key parts of an InGaAs/InP single-photon detector in-

    Impact ionization coefficient ratio in InGaAs/InAlAs
    1896 JOURNAL OF LIGHTWAVE TECHNOLOGY VOL. 23 NO. 5
    InAlAs-InGaAs based avalanche photodiodes for next

  15. Savannah Avatar
    Savannah

    Abstract. High-sensitivity InGaAs-detectors for the short-wave infrared (SWIR) reveal a number of interesting properties which can be beneficially used in industrial process control or in defense and security applications.

    T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes

  16. Bryan Avatar
    Bryan

    Avalanche photodiode An avalanche photodiode ( APD ) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication .

    T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes

  17. Alyssa Avatar
    Alyssa

    Finally, in the third portion of this paper, performance results of a novel impact ionization engineered InGaAs-InAlAs based avalanche photodiode are presented showing excess noise values lower than any previously published InGaAs based avalanche photodiode.

    T R High Sensitivity 2.5/10 Gbps InAlAs Avalanche Photodiodes